HMC452QS16G_06 Datasheet, PDF (7/22 Pages) Hittite Microwave Corporation – InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz

v01.0205
HMC452QS16G / 452QS16GE
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
5
Output IP3 vs. Temperature @ 900 MHz
50
48
46
44
42
40
+25 C
38
+85 C
36
-40 C
34
32
30
0.75
0.8
0.85
0.9
0.95
1
FREQUENCY (GHz)
Noise Figure vs. Temperature @ 900 MHz
10
9
8
7
6
5
4
+25 C
3
+85 C
2
-40 C
1
0
0.7 0.75 0.8 0.85 0.9 0.95 1
FREQUENCY (GHz)
1.05 1.1
Reverse Isolation
vs. Temperature @ 900 MHz
0
-5
-10
+25 C
+85 C
-15
-40 C
-20
-25
-30
0.7 0.75 0.8 0.85 0.9 0.95 1
FREQUENCY (GHz)
1.05 1.1
Gain, Power & IP3
vs. Supply Voltage @ 900 MHz
50
45
40
35
30
25
Gain
P1dB
20
Psat
OIP3
15
10
4.5
4.75
5
5.25
5.5
Vs (Vdc)
Gain, Power & IP3
vs. Supply Current @ 900 MHz*
55
50
45
40
Gain
P1dB
Psat
35
OIP3
30
25
20
15
10
250
300
350
400
450
500
Icq (mA)
ACPR vs. Supply Voltage @ 910 MHz
CDMA IS95, 9 Channels Forward
-25
-30
-35
CDMA IS95
Frequency: 910 MHz
-40
Integration BW: 1.228 MHz
Forward Link, 9 Channels
-45
-50
4.5V
5V
5.5V
-55
-60
-65
Source ACPR
-70
12 14 16 18 20 22 24 26 28
Channel Power (dBm)
5 - 258
* Icq is controlled by varying VPD.
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20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
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