HMC452QS16G_06 Datasheet, PDF (1/22 Pages) Hittite Microwave Corporation – InGaP HBT 1 WATT POWER AMPLIFIER, 0.4 - 2.2 GHz

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HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Typical Applications
Features
The HMC452QS16G / HMC452QS16GE is ideal for
applications requiring a high dynamic range amplifier:
• GSM, GPRS & EDGE
• CDMA & W-CDMA
• CATV/Cable Modem
• Fixed Wireless & WLL
Output IP3: +48 dBm
22.5 dB Gain @ 400 MHz
9 dB Gain @ 2100 MHz
53% PAE @ +31 dBm Pout
+24 dBm CDMA2000 Channel Power@ -45 dBc ACP
Single +5V Supply
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm²
Functional Diagram
General Description
The HMC452QS16G & HMC452QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power amplifiers
operating between 0.4 and 2.2 GHz. Packaged
in a miniature 16 lead QSOP plastic package, the
amplifier gain is typically 22.5 dB at 0.4 GHz and 9
dB at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the amplifier
output IP3 can be optimized to +43 dBm at 0.4 GHz
or +48 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC452QS16G & HMC452QS16GE ideal power
amplifiers for Cellular/PCS/3G, WLL, ISM and Fixed
Wireless applications.
Electrical Specifications, T_A = +25°C, Vs= +5V, VPD = +5V ^[1]
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range
400 - 410
450 - 496
810 - 960
1710 - 1990
2010 - 2170
MHz
Gain
20 22.5
19 21.5
13 15.5
7.5 10
6.5 9
dB
Gain Variation Over
Temperature
0.012 0.02
0.012 0.02
0.012 0.02
0.012 0.02
0.012 0.02 dB/C
Input Return Loss
13
15
9
17
11
dB
Output Return Loss
7
8
12
15
20
dB
Output Power for 1dB
27.5 30.5
Compression (P1dB)
27.5 30.5
27 30
28 31
28 31
dBm
Saturated Output
31
31
31
31.5
32.5
dBm
Power (Psat)
Output Third Order
Intercept (IP3) ^[2]
40 43
41 44
45 48
45 48
45 48
dBm
Noise Figure
7
7
7
7
7.5
dB
Supply Current (Icq)
485
485
485
485
485
mA
Control Current (IPD)
10
10
10
10
10
mA
[1] Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com