HMC717LP3 Datasheet, PDF (6/10 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz

v02.0809
HMC717LP3 / 717LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Absolute Bias Resistor
Range & Recommended Bias Resistor Values
Vdd (V)
Rbias (Ohms)
Idd (mA)
Min
Max
Recommended
2k
20
3V
2k ^[1]
Open Circuit
4.7k
26
20k
31
261
50
5V
150 ^[2]
Open Circuit
1k
65
2k
73
[1] With Vdd= 3V and Rbias < 2kΩ may result in the part becoming conditionally stable which is not recommended.
[2] With Vdd = 5V and Rbias<150Ω may result in the part becoming conditionally stable which is not recommended.
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Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 7.73 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5V
+10 dBm
150 °C
0.5 W
129.5 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Supply Voltage
(Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V)
Vdd (V)
Idd (mA)
2.7
23
3.0
31
3.3
39
4.5
60
5.0
73
5.5
85
Note: Amplifier will operate over full voltage ranges shown above.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]
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