HMC717LP3 Datasheet, PDF (1/10 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz

v02.0809
7
Typical Applications
The HMC717LP3(E) is ideal for:
• Fixed Wireless and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Public Safety Radio
• Access Points
Functional Diagram
HMC717LP3 / 717LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
Features
Noise Figure: 1.1 dB
Gain: 16.5 dB
Output IP3: +31.5 dBm
Single Supply: +3V to +5V
16 Lead 3x3mm QFN Package: 9 mm²
General Description
The HMC717LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for fixed wireless
and LTE/WiMAX/4G basestation front-end receivers
operating between 4.8 and 6.0 GHz. The amplifier
has been optimized to provide 1.1 dB noise figure,
16.5 dB gain and +31.5 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC717LP3(E) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
7-1
Electrical Specifications
T_A = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V ^{[1] [2]}
Parameter
Vdd = +3V
Min.
Typ.
Max.
Vdd = +5V
Min.
Typ.
Max.
Frequency Range
4.8 - 6.0
4.8 - 6.0
Gain
12
14.3
13.5
16.5
Gain Variation Over Temperature
0.01
0.01
Noise Figure
1.25
1.5
1.1
1.4
Input Return Loss
13
13
Output Return Loss
13
18
Output Power for 1 dB Compression (P1dB)
12
14
15
18.5
Saturated Output Power (Psat)
15
19.5
Output Third Order Intercept (IP3)
25.5
31.5
Total Supply Current (Idd)
31
40
73
100
[1] Rbias resistor sets current, see application circuit herein
[2] Vdd = Vdd1 = Vdd2
Units
MHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]