HMC717LP3 Datasheet, PDF (3/10 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz

v02.0809
7
Noise Figure vs. Temperature ^{[1] [2] [4]}
2.1
+85C
1.8
1.5
1.2
0.9
0.6
0.3
0
4.5
Vdd=5V
Vdd=3V
+25C
-40C
4.9
5.3
5.7
6.1
6.5
FREQUENCY (GHz)
HMC717LP3 / 717LP3E
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 4.8 - 6.0 GHz
P1dB vs. Temperature ^{[1] [2]}
24
22
Vdd=5V
20
18
16
14
12
10
8
4.5
Vdd=3V
+25C
+85C
-40C
4.9
5.3
5.7
6.1
6.5
FREQUENCY (GHz)
7-3
Psat vs. Temperature ^{[1] [2]}
24
Vdd=5V
22
20
18
16
14
12
10
Vdd=3V
+25C
+85C
-40C
8
4.5
4.9
5.3
5.7
6.1
6.5
FREQUENCY (GHz)
Output IP3 vs. Temperature ^{[1] [2]}
40
37
Vdd=5V
34
31
28
25
22
19
16
4.5
Vdd=3V
+25C
+85C
-40C
4.9
5.3
5.7
6.1
6.5
FREQUENCY (GHz)
Output IP3 and Total Supply Current vs.
Supply Voltage @ 4800 MHz ^[3]
36
95
Output IP3 and Total Supply Current vs.
Supply Voltage @ 5900 MHz ^[3]
36
95
34
80
34
80
32
65
32
65
30
50
30
50
28
35
28
Idd
35
IP3
26
Idd
20
26
20
IP3
24
5
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
Voltage Supply (V)
24
5
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
Voltage Supply (V)
[1] Vdd = 5V, Rbias = 2k Ω
[2] Vdd = 3V, Rbias = 20kΩ
[3] Rbias = 2kΩ for Vdd = 5V, Rbias = 20kΩ for Vdd = 3V
[4] Measurement reference plane shown on evaluation PCB drawing.
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