3SK290 Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

S Parameter (V_DS = 4 V, V_G2S = 3 V, I_D = 10 mA, Z_O = 50 ½)
Freq.
(MHz)
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
S11
MAG.
0.998
0.994
0.997
0.991
0.993
0.980
0.976
0.971
0.962
0.955
0.945
0.939
0.927
0.925
0.911
0.901
0.893
0.881
0.876
0.869
ANG.
–3.3
–6.7
–10.2
–13.5
–16.9
–20.8
–23.7
–27.0
–30.7
–33.7
–36.9
–40.2
–43.3
–46.5
–49.4
–52.3
–55.9
–59.0
–61.5
–64.3
S21
MAG.
2.17
2.20
2.19
2.17
2.16
2.12
2.10
2.08
2.05
2.03
1.99
1.96
1.93
1.90
1.87
1.84
1.81
1.78
1.75
1.71
ANG.
176
172
168
163
159
155
151
146
142
139
135
131
127
123
120
116
112
108
105
102
S12
MAG.
0.001
0.001
0.002
0.003
0.004
0.004
0.005
0.005
0.006
0.006
0.006
0.006
0.006
0.006
0.006
0.006
0.005
0.005
0.005
0.005
ANG.
41.3
88.9
74.4
81.6
79.7
72.6
66.9
70.9
67.7
63.9
64.1
63.9
59.9
60.0
58.3
60.3
62.0
61.2
65.0
68.8
3SK290
S22
MAG.
0.971
0.971
0.970
0.969
0.967
0.965
0.962
0.959
0.956
0.953
0.950
0.946
0.942
0.939
0.933
0.930
0.925
0.921
0.917
0.913
ANG.
–1.9
–4.5
–7.1
–9.8
–12.1
–14.8
–17.3
–19.7
–22.1
–24.8
–27.2
–29.5
–32.1
–34.6
–36.7
–39.1
–41.5
–43.8
–46.1
–48.4
7