3SK290 Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK290
Silicon N-Channel Dual Gate MOS FET
Application
UHF RF amplifier
Features
· Low noise figure.
NF = 2.3 dB Typ. at f = 900 MHz
· High gain.
PG = 19.3 dB Typ. at f = 900 MHz
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
ADE-208-271
1st. Edition