3SK290 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK290
Absolute Maximum Ratings (Ta = 25¡C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
Unit
12
V
±8
V
±8
V
25
mA
100
mW
125
°C
–55 to +125
°C
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2