3SK290 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK290
Maximum Channel Power
Dissipation Curve
200
150
100
50
0
50
100
150
200
Ambient Temperature Ta (¡C)
Typical Output Characteristics
20
V_G2S = 3 V
1.2 V
1.0 V
16
12
0.8 V
8
0.6 V
4
0.4 V
V_G1S = 0.2V
0
2
4
6
8 10
Drain to Source Voltage V_DS (V)
Drain Current vs.
Gate 1 to Source Voltage
20
3.0 V
V_DS = 6 V
16
2.5 V
2.0 V
12
1.5 V
8
4
V_G2S = 1.0 V
Drain Current vs.
Gate 2 to Source Voltage
20
V_DS = 6 V
1.5 V
16
3.0 V
2.5 V
1.0 V
12
2.0 V
8
V_G1S = 0.5 V
4
0
0.8 1.6 2.4 3.2 4.0
Gate 1 to Source Voltage V_G1S (V)
0
0.8 1.6 2.4 3.2 4.0
Gate 2 to Source Voltage V_G2S (V)
4