3SK290 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

Forward Transfer Admittance
vs. Gate 1 to Source Voltage
30
V_DS = 6 V
f = 1 kHz
V _G2S = 3.0 V
24
2.5 V
2.0 V
18
1.5 V
12
1.0 V
6
0
–0.5 0
0.5 1.0 1.5 ^2.0
Gate1 to Source Voltage VG1S (V)
3SK290
Power Gain vs. Drain Current
20
16
12
8
4
V_DS = 4 V
V_G2S = 3 V
f = 900 MHz
0
4
8
12 16 20
Drain Current I D (mA)
Noise Figure vs. Drain Current
5
V_DS = 4 V
VG2S = 3 V
4
f = 900 MHz
3
2
1
0
4
8
12 16 20
Drain Current I _D (mA)
5