2SK1761 Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Reverse Drain Current vs. Source
to Drain Voltage
20
Pulse Test
16
12
8
4 _{VGS = 10 V}
0, – 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
2SK1761
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1.0
0.5
Tc = 25°C
0.3 _0.2
0.1
0.1 _0.05
0.02
0.03
1 ^{shot Pulse}
0.01
0.01
10 µ
100 µ
θ ch – c(t) = ^γ s(t) ^. θ ch – c
θ ch – c = 1.67°C / W, Tc = 25°C
P DM
D
=
PW
T
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
7