2SK1761 Datasheet, PDF(3/9 Page) Hitachi Semiconductor

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2SK1761 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

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2SK1761

Electrical Characteristics (Ta = 25Â°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

250

Gate to source breakdown

voltage

V(BR)GSS

Â±30

Gate to source leak current IGSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off)

2.0

Static drain to source on state RDS(on)

resistance

Forward transfer admittance |yfs|

5.0

Typ

0.23

8.0

Max

Â±10

250

3.0

0.35

Input capacitance

Ciss

Output capacitance

Coss â

Reverse transfer capacitance Crss

Turn-on delay time

t d(on)

Rise time

Turn-off delay time

t d(off)

Fall time

Body to drain diode forward VDF

voltage

Body to drain diode reverse trr

recovery time

Note 1. Pulse Test

1100 â

440 â

100 â

1.0

200 â

Unit Test Conditions

ID = 10 mA, VGS = 0

IG = Â±100 ÂµA, VDS = 0

ÂµA VGS = Â±25 V, VDS = 0

ÂµA VDS = 200 V, VGS = 0

ID = 1 mA, VDS = 10 V

â¦

ID = 6 A

VGS = 10 V*1

ID = 6 A

VDS = 10 V*1

pF VDS = 10 V

pF VGS = 0

pF f = 1 MHz

ns ID = 6 A

ns VGS = 10 V

ns RL = 5 â¦

IF = 12 A, VGS = 0

ns IF = 12 A, VGS = 0,

diF / dt = 100 A / Âµs

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