2SK1761 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1761
Power vs. Temperature Derating
160
120
80
40
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
20
10 V
6V
Pulse Test
16
5.5 V
12
5V
8
4.5 V
4
VGS = 4 V
0
4
8
12
16
20
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
100
30
10
3
PW
=
10
100
1 _ms
ms _{(1 shot)}
µs
1
Ta = 25°C
0.3 Operation in this area
is limited by R DS (on)
0.1
1
3
10
30 100 300
Drain to Source Voltage V _DS (V)
1000
Typical Transfer Characteristics
10
8
VDS = 10 V
Pulse Test
6
Tc = 75°C
25°C
4
– 25°C
2
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
4