2SK1761 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1761
Body to Drain Diode Reverse
Recovery Time
500
di / dt = 100 A / µs
V GS = 0, Ta = 25°C
200
100
50
20
10
5
0.2
0.5 1
2
5 10 20
Reverse Drain Current IDR (A)
10000
Typical Capacitance vs. Drain
to Source Voltage
VGS = 0
f = 1 MHz
Ciss
1000
Coss
100
Crss
10
0
10
20
30
40
50
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
500
20
ID = 12 A
400
16
300
V DS
200
V GS
12
VDD = 200 V
100 V
8
50 V
100
0
0
VDD = 200 V
4
100 V
50 V
0
8
16
24
32
40
Gate Charge Qg (nc)
Switching Characteristics
500
VGS = 10 V,V DD =.. 30 V
PW = 2 µs, duty 1 %
200
td (off)
100
50
tr
20
10
tf
td (on)
5
0.1 0.2
0.5 1 2
Drain Current ID (A)
5 10
6