2SK1761 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
10 A
2
5A
1
ID = 2 A
0
4
8
12
16
20
Gate to Source Voltage V GS(V)
Static Drain to Source on State
Resistance vs. Temperature
1.0
0.8
Pulse Test
V GS = 10 V
0.6
ID = 10 A
0.4
5A
2A
0.2
0
– 40
0
40
80
120
160
Case Temperature Tc (°C)
2SK1761
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
V GS = 10 V
0.2
15 V
0.1
0.05
0.5
1
2
5
10 20
50
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 10 V
Pulse Test
20
Tc = –25°C
10
5
75°C
25°C
2
1
0.5
0.1 0.2
0.5
1
2
Drain Current ID (A)
5 10
5