2SK1318 Datasheet, PDF (7/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

Reverse Drain Current vs.
Source to Drain Voltage
20
16
V_GS = 10 V
12
15 V
Pulse Test
8
V_GS = 0, —5 V
4
0
0.5
1
1.5
2
2.5
Source to Drain Voltage V_SD (V)
2SK1318
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0 ^{D = 1}
0.5
0.3 _0.2
0.1
0.1
0.05
0.02
0.03
1
0.01
Shot
Pulse
0.01
10 µ
100 µ
T_C = 25°C
θch - c (t) = γ_S (t) • θch—c
θch - c = 3.57°C/W, T_C = 25°C
P_DM
PW
T
D
=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
7