2SK1318 Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK1318
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain
current
V_DSS
V_GSS
I_D
I *¹
D (peak)
I _DR
Channel dissipation
Pch*²
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Ratings
Unit
120
V
±20
V
20
A
80
A
20
A
35
W
150
°C
–55 to +150
°C
2