2SK1318 Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS
120
Gate to source breakdown
voltage
V_(BR)GSS
±20
Gate to source leak current
I _GSS
—
Zero gate voltege drain current I_DSS
—
Gate to source cutoff voltage
V_GS(off)
1.0
Static drain to source on state R_DS(on)
—
resistance
—
Forward transfer admittance
|y_fs|
10
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance Crss
—
Turn-on delay time
td (on) —
Rise time
tr
—
Turn-off delay time
td (off) —
Fall time
tf
—
Body–drain diode forward
V_DF
—
voltage
Body–drain diode reverse
trr
—
recovery time
Note: 1. Pulse test
2SK1318
Typ
Max
—
—
—
—
—
±10
—
250
—
2.0
0.095 0.12
0.11 0.16
17
Å\
1300 Å\
430
—
60
—
14
—
70
—
210
—
90
—
1.4
—
280
—
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I_D = 10mA, V_GS = 0
I_G = ±100µA, V_DS = 0
V_GS = ±16V, V_DS = 0
V_DS = 100V, V_GS = 0
I_D = 1mA, V_DS = 10V
I_D = 10A, V_GS = 10V*¹
I_D = 10A, V_GS = 4V*¹
I_D = 10A, V_DS = 10V*¹
V_DS = 10V, V_GS = 0,
f = 1MHz
I_D = 10A,
V_GS = 10V, R_L = 3
I_F = 20A, V_GS = 0
I_F = 20A, V_GS = 0,
diF / dt = 50A / µs
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