2SK1318 Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
Pulse Test
4
3
2
I_D = 20 A
1
10 A
5A
0
4
8
12 16 20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.25
I_D = 20 A
Pulse Test
0.2
10 A
0.15
0.1
V_GS = 4 V
5A
10 A
5A
V_GS = 10 V
0.05
0
—40 0
40 80 120 160
Case Temperature T_C (°C)
2SK1318
Static Drain to Source on State
Resistance vs. Drain Current
1
0.5 Pulse Test
0.2
0.1
0.05
V_GS = 4 V
10 V
0.02
0.01
0.5 1 2
5 10 20 50
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
100
V_DS = 10 V
50 _{Pulse Test}
25°C
20
Tc = —25°C
10
75°C
5
2
1
0.5 1 2
5 10 20 50
Drain Current I_D (A)
5