2SK1318 Datasheet, PDF (1/10 Pages) Hitachi Semiconductor – Silicon N Channel MOS FET High Speed Power Switching

2SK1318
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1269 (Z)
1st. Edition
Jan. 2001
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4V gate drive device can be driven from 5V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D
12 ₃
1. Gate
G
2. Drain
3. Source
S