2SK1299 Datasheet, PDF (7/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1299(L), 2SK1299(S)
Reverse Drain Current vs.
Source to Drain Voltage
10
Pulse Test
8
6
5V
4
V_GS = 10 V
2
V_GS = 0, – 5 V
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03 _10.S0h1ot Pulse
0.01
10 µ
100 µ
T_C = 25°C
1m
10 m
Pulse Width PW (s)
θch–c (t) = γs (t) · θch–c
θch–c = 6.25°C/W, T_C = 25°C
P_DM
T ^PW
D = ^PTW
100 m
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor
R_L
50 Ω
Vin = 10 V
V_DD =^.. 30 V
Wavewforms
90 %
Vin 10 %
Vout 10 %
10 %
td _(on)
90 %
90 %
tr
td _(off)
tf
7