2SK1299 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1299(L), 2SK1299(S)
Power vs. Temperature Derating
30
20
10
0
50
100
150
Case Temperature T_C (°C)
Typical Output Characteristics
10 _{10 V}
5V
4.5 V
4V
8
6
3.5 V
4
3V
2
V_GS = 2.5 V
Pulse Test
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Maximum Safe Operation Area
50
Operation in this area
20 ^{is limited by RDS (on)}
10
10 _µs
5
PW
2
1
0.5
= _{10 m1sm(1sShot)}
0.2
0.1 _{Ta = 25°C}
0.05
1 2 5 10 20
50 100 200 500 1000
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
5
V_DS = 10 V
Pulse Test
4
3
2
1
25°C
T_C = –25°C
75°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
4