2SK1299 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1299(L), 2SK1299(S)
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
5
0.1
di/dt = 50 A/µs
V_GS = 0, Ta = 25°C
Pulse Test
0.2 0.5 1 2
5 10
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
200
20
V_DD = 80 V
160
50 V
16
25 V
120
V_GS
12
80 ^VDS
8
40
V_DD = 25 V
I_D = 3 A 4
50 V
80 V
0
0
8
16
24
32 40
Gate Charge Qg (nc)
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
Crss
10
V_GS = 0
f = 1 MHz
1
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
Switching Characteristics
500
200
t_{d (off)}
100
50
t_f
t_r
20
10
5
0.1
t_{d (on)}
V_GS = 10 V, V_DD =.. 30 V
PW = 2µs, duty < 0.1 %
0.2 0.5 1 2
5 10
Drain Current I_D (A)
6