2SK1299 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1299(L), 2SK1299(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS 100
Gate to source breakdown
voltage
V_(BR)GSS ±20
Gate to source leak current
I _GSS
—
Zero gate voltage drain current I_DSS
—
Gate to source cutoff voltage V_GS(off) 1.0
Static Drain to source on state R_DS(on) —
resistance
—
Forward transfer admittance |yfs|
2.4
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note: 1. Pulse test
Typ Max Unit
—
—
V
—
—
V
—
±10 µA
—
100 µA
—
2.0
V
0.25 0.35 Ω
0.30 0.45 Ω
4.0
—
S
400 —
pF
165 —
pF
45
—
pF
5
—
ns
35
—
ns
160 —
ns
60
—
ns
1.0
—
V
135 —
ns
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 80 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 2 A, V_GS = 10 V *¹
I_D = 2 A, V_GS = 4 V ¹*
I_D = 2 A, V_DS = 10 V *¹
V_DS = 10 V, V_GS = 0,
f = 1 MHz
I_D = 2 A, V_GS = 10 V,
R_L = 15 Ω
I_F = 3 A, V_GS = 0
I_F = 3 A, V_GS = 0,
di_F/dt = 50 A/µs
3