2SK1299 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
Pulse Test
1.6
I_D = 5 A
1.2
0.8
2A
0.4
1A
0
2
4
6
8
10
Gate to Source Voltage V_GS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.5
I_D = 5 A
2A
0.4
1A
5A
V_GS = 4 V
0.3
2A
1A
10 V
0.2
0.1
0
–40
Pulse Test
0
40
80 120 160
Case Temperature T_C (°C)
2SK1299(L), 2SK1299(S)
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
V_GS = 4 V
10 V
0.2
0.1
0.05
0.2
0.5 1 2
5 10 20
Drain Current I_D (A)
Forward Transfer Admittance
vs. Drain Current
10
V_DS = 10 V
5 ^{Pulse Test}
T_C = –25°C
2
25°C
75°C
1
0.5
0.2
0.1
0.05 1.0 0.2 0.5 1 2
5
Drain Current I_D (A)
5