HAT2040R Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET Power Switching

HAT2040R
Body–Drain Diode Reverse
Recovery Time
100
50
20
di/dt = 20 A/µs
V_GS = 0, Ta = 25°C
10
0.1 0.2 0.5 1 2 5 10 20
Reverse Drain Current I _DR (A)
10000
3000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
Crss
30
VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
20
I _D = 15 A
40
V _DD = 5 V
16
10 V
25 V
30 _VDS
12
V_GS
20
8
10
V _DD = 25 V
4
10 V
5V
0
0
40
80 120 160 200
Gate Charge Qg (nc)
1000
500
200
100
50
Switching Characteristics
tr
t _d(off)
tf
t _d(on)
20 _{VGS = 4 V, V DS = 10 V}
RG = 50 Ω , duty < 1 %
10
0.1 0.2 0.5 1 2 5 10 20
Drain Current I _D (A)
6