HAT2040R Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET Power Switching

HAT2040R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
500
10 µs
100
10
1
Othpiseararetioa^Dn^C_is^Oin^{perationP(WPW=}_<¹¹₁^0N₀₁o^mm_ts0e^s₎^s0₄^µs
limited by R _DS(on)
0.1
Ta = 25 °C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
50
10V
Pulse Test
4V
40
3.5 V
30
3V
20
10
V_GS = 2.5 V
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
50
V _DS = 10 V
Pulse Test
40
30
25°C
20
Tc = 75°C
–25°C
10
0
1
2
3
4
5
Gate to Source Voltage V GS (V)
4