HAT2040R Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET Power Switching

HAT2040R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
V_DSS
30
Gate to source voltage
V_GSS
±20
Drain current
I_D
15
Drain peak current
I Note1
D(pulse)
120
Body-drain diode reverse drain current I_DR
15
Channel dissipation
Pch ^Note2
2.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Unit
V
V
A
A
A
W
°C
°C
2