HAT2040R Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET Power Switching

Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
0.12
0.08
I D = 10 A
0.04
5A
2A
0
4
8
12
16 20
Gate to Source Voltage V _GS (V)
HAT2040R
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
V_GS = 4 V
5
10 V
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
I D = 2 A, 5 A, 10 A
12
V _GS = 4 V
8
4
10 V
2 A, 5 A, 10 A
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = –25 °C
10
75 °C
3
25 °C
1
0.3
0.1
0.1
V _DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I _D (A)
5