HAT2040R Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET Power Switching

Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown V_(BR)DSS
30
voltage
Gate to source leak current I_GSS
—
Zero gate voltege drain
I _DSS
—
current
Gate to source cutoff voltage V_GS(off)
1.0
Static drain to source on state R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance |y_fs|
18
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance Crss
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward V_DF
—
voltage
Body–drain diode reverse t_rr
—
recovery time
Note: 3. Pulse test
Typ
Max
—
—
—
±0.1
—
1
—
2.5
6.2
8.0
9.0
13.0
30
—
4400 —
950
—
400
—
90
—
15
—
18
—
110
—
440
—
160
—
170
—
0.9
1.17
55
—
HAT2040R
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
I_D = 10mA, V_GS = 0
V_GS = ±20V, V_DS = 0
V_DS = 30 V, V_GS = 0
V_DS = 10V, I _D = 1mA
I_D = 8A, V_GS = 10V ^Note3
I_D = 8A, V_GS = 4V ^Note3
I_D = 8A, V_DS = 10V ^Note3
V_DS = 10V
V_GS = 0
f = 1MHz
V_DD = 10V
V_GS = 10V
I_D = 15A
V_GS = 4V, I_D = 8A
V_DD ≅ 10V
IF = 15A, V_GS = 0 ^Note3
IF = 15A, V_GS = 0
diF/ dt =20A/µs
3