HAT2024R Datasheet, PDF (6/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2024R
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di/dt = 20 A/µs
5
V_GS = 0, Ta = 25°C
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I _DR (A)
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
20
10
0
10
20 30 40
50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
20
I _D = 5.5 A
40
16
30
V_DS
20
V _DD = 5 V
10 V
20 V
12
V_GS ⁸
10
V _DD = 20 V
4
10 V
5V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
Reverse Drain Current vs.
Souece to Drain Voltage
20
16
V_GS = 5 V
12
0, –5 V
8
4
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V _SD (V)
6