HAT2024R Datasheet, PDF (5/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2024R
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
ID= 5 A
0.2
2A
0.1
1A
0
2
4
6
8
10
Gate to Source Voltage V _G(_SV)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.5 1 2
5 10 20
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
0.12
0.08
0.04
0
–40
2A
ID= 5 A
1A
V_GS = 4 V
1 A, 2 A, 5 A
10 V
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
10
Tc = –25 °C
25 °C
5
2
75 °C
1
0.5
0.2
0.1
0.2
V_DS = 10 V
Pulse Test
0.5 1 2
5 10 20
Drain Current I _D (A)
5