HAT2024R Datasheet, PDF (4/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2024R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
100
10 µs
30
10
3
1
0.3
100 _µs
OtlhimpiseitraeardteiaobnyiDsCiRnO_D^pe_S^r₍^a_o^ti_n^o₎^{nPW(PW= 1<101mm0s}N^ss_o)te5
0.1
Ta = 25°C
0.03 _{1 shot Pulse}
0.01 ^{1 Drive Operation}
0.1 0.3 1 3
10 30 100
Drain to Source Voltage V DS(V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
10V 8 V
20
6V
5V
Pulse Test
16
4.5 V
12
4V
8
3.5 V
4
3V
V_GS = 2.5 V
0
2
4
6
8
10
Drain to Source Voltage V _DS(V)
Typical Transfer Characteristics
20
25°C
16
Tc = 75°C
–25°C
12
8
4
V_DS = 10 V
Pulse Test
0 _{Gate t2o Source4Voltage6 V G8(SV)} 10
4