HAT2024R Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown V_(BR)DSS
30
voltage
Gate to source breakdown V_(BR)GSS
±20
voltage
Gate to source leak current I_GSS
—
Zero gate voltege drain
I _{D SS}
—
current
Gate to source cutoff voltage V_GS(off)
1.0
Static drain to source on state R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance |y_fs|
3.5
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance Crss
—
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note: 1. Pulse test
HAT2024R
Typ
Max
Unit
—
—
V
—
—
V
—
±10
µA
—
10
µA
—
2.0
V
0.05 0.065 Ω
0.078 0.11 Ω
5.5
—
S
310
—
pF
220
—
pF
100
—
pF
17
—
ns
190
—
ns
25
—
ns
60
—
ns
0.9
1.4
V
50
—
ns
Test Conditions
I_D = 10mA, V_GS = 0
I_G = ±100µA, V_DS = 0
V_GS = ±16V, V_DS = 0
V_DS = 30 V, V_GS = 0
V_DS = 10V, I _D = 1mA
I_D = 3A, V_GS = 10V*¹
I_D = 3A, V_GS = 4V*¹
I_D = 3A, V_DS = 10V*¹
V_DS = 10V
V_GS = 0
f = 1MHz
V_GS = 4V, I_D = 3A
V_DD ≅ 10V
IF = 5.5A, V_GS = 0*¹
IF = 5.5A, V_GS = 0
diF/ dt =20A/µs
3