HAT2024R Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2024R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
30
V
Gate to source voltage
V_GSS
±20
V
Drain current
I_D
5.5
A
Drain peak current
I *1
D(pulse)
44
A
Body to drain diode reverse drain
I _DR
current
5.5
A
Channel dissipation
Pch*²
2
W
Channel dissipation
Pch *³
3
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
2