HAT1031T Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1031T
Reverse Drain Current vs.
Souece to Drain Voltage
–10
–8
V_GS = –5 V
–6
–4
0, 5 V
–2
Pulse Test
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V _SD (V)
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
R_L
Vin
–4 V
50Ω
VDD
= –10 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
t_f
6