HAT1031T Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

Main Characteristics
HAT1031T
Power vs. Temperature Derating
2.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
1.5
1.0
0.5
1 _{Drive Operation}
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
–100
–30
PW=10 µs
–10
100µs
–3
–1
–0.3
–0.1
Othpiseararetioanisin^{(PWD<C1O0 sp)eNroa1}te^t0io₅^nm1sms
limited by R DS(on)
Ta = 25 °C
–0.03 1 shot Pulse
–0.01 ^{1 Drive Operation}
–0.1 –0.3 –1 –3
–10 –30 –100
Drain to Source Voltage V DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
–20
–10 V
–8 V
Pulse Test
–16
–6 V
–4 V
–12
–3.5 V
–8
–3 V
–2.5 V
–4
V_GS = –2.0 V
0
–2 –4 –6 –8 –10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
–10
Tc = –25 °C
25 °C
–8
75 °C
–6
–4
–2
V _DS = –10 V
Pulse Test
0
–2 –4 –6 –8 –10
Gate to Source Voltage V GS (V)
3