HAT1031T Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1031T
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V_DSS
–20
V
Gate to source voltage
V_GSS
±10
V
Drain current
I_D
–2.5
A
Drain peak current
I Note1
D(pulse)
–20
A
Body–drain diode reverse drain current I_DR
–2.5
A
Channel dissipation
Pch ^Note2
1
W
Channel dissipation
Pch ^Note3
1.5
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW ≤ 10µs, duty cycle ≤ 1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW≤ 10s
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source leak current
I _GSS
Zero gate voltege drain current
I _DSS
Gate to source cutoff voltage
V_GS(off)
Static drain to source on state
R_DS(on)
resistance
R_DS(on)
Forward transfer admittance
|y_fs|
Input capacitance
Ciss
–20
±10
—
—
–0.5
—
—
2.6
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t _rr
—
Note: 4. Pulse test
Typ
—
—
—
—
—
0.13
0.21
4
390
200
70
14
75
60
55
–0.9
45
Max Unit
—
V
—
V
±10 µA
–1
µA
–1.5 V
0.16 Ω
0.28 Ω
—
S
—
pF
—
pF
—
pF
—
ns
—
ns
—
ns
—
ns
–1.17 V
—
ns
Test Conditions
I_D = –10mA, V_GS = 0
I_G = ±100µA, V_DS = 0
V_GS = ±8V, V_DS = 0
V_DS = –20 V, V_GS = 0
V_DS = –10V, I _D = –1mA
I_D = –2A, V_GS = –4V ^Note4
I_D = –2A, V_GS = –2.5V ^Note4
I_D = –2A, V_DS = –10V ^Note4
V_DS = –10V
V_GS = 0
f = 1MHz
V_GS = –4V, I_D = –2A
V_DD ≈ –10V
IF = –2.5A, V_GS = 0 ^Note4
IF = –2.5A, V_GS = 0
diF/ dt =20A/µs
2