HAT1031T Datasheet, PDF (1/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1031T
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 2.5 V gate drive
• Low drive current
• High density mounting
Outline
ADE-208-528D (Z)
5th. Edition
December 1998
TSSOP–8
1
D
87 ^{6 5}
8
123 ⁴
D
4
5
G
G
SS
23
MOS1
SS
67
MOS2
1, 8
Drain
2, 3, 6, 7 Source
4, 5
Gate