HAT1031T Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET High Speed Power Switching

HAT1031T
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di / dt = 20 A / µs
5
V_GS = 0, Ta = 25 °C
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I _DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
VGS = 0
10
f = 1 MHz
0 –10 –20 –30 –40 –50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
0
0
V_DD = –5 V
–10 V
–10
–25 V
–2
–20
V _DS
V _DD = –25 V
–30
–10 V
–5 V
–40
–4
–6
V GS
–8
–50 ^{I D = –2.5 A}
0 _{1.6 3.2 4.8 6.4}
Gate Charge Qg (nc)
–10
8
Switching Characteristics
500
V _GS = –4 V, V _DD = –10 V
PW = 3 µs, duty < 1 %
200
tr
100
t _d(on)
50
tf
20
10
t _d(off)
5
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current I _D (A)
5