3SK194 Datasheet, PDF (6/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK194
Power Gain vs. Drain to Source Voltage
20
V_G2S = 3 V
I_D = 10 mA
16
f = 900 MHz
12
8
4
0
4
8
12
16 20
Drain to Source Voltage V_DS (V)
Noise Figure vs. Drain Current
10
V_DS = 6 V
V_G2S = 3 V
8
f = 900 MHz
6
4
2
0
4
8
12
16 20
Drain Current I_D (mA)
Noise Figure vs. Drain Current
5
V_DS = 6 V
V_G2S = 3 V
4
f = 200 MHz
3
2
1
0
4
8
12
16 20
Drain Current I_D (mA)
Noise Figure vs.
Drain to Source Voltage
5
V_G2S = 3 V
I_D = 10 mA
4
f = 200 MHz
3
2
1
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
6