3SK194 Datasheet, PDF (2/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK194
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V_DS
V_G1S
V_G2S
I_D
Pch
Tch
Tstg
Ratings
Unit
15
V
±10
V
±10
V
35
mA
150
mW
125
°C
–55 to +125
°C
2