3SK194 Datasheet, PDF (5/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

Forward Transfer Admittance vs.
Gate 1 to Source Voltage
30
V_DS = 6 V
f = 1 kHz
24
18
3
12
2.5
6
2
1.5
1
0
0.5
–1
0
1
2
3
4
Gate 1 to Source Voltage V_G1S (V)
Power Gain vs. Drain Current
20
16
12
8
4
V_DS = 6 V
V_G2S = 3 V
f = 900 MHz
0
4
8
12
16 20
Drain Current I_D (mA)
3SK194
Power Gain vs. Drain Current
50
V_DS = 6 V
V_G2S = 3 V
40
f = 200 MHz
30
20
10
0
4
8
12
16 20
Drain Current I_D (mA)
Power Gain vs. Drain to Source Voltage
50
V_G2S = 3 V
I_D = 10 mA
40
f = 200 MHz
30
20
10
0
4
8
12 16 20
Drain to Source Voltage V_DS (V)
5