3SK194 Datasheet, PDF (4/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK194
300
Maximum Channel Power
Dissipation Curve
200
100
0
50
100
150
Ambient Temperature Ta (°C)
Drain Current vs. Gate 1 to
Source Voltage
20
2 _1.5
V_DS = 6 V
16
1
12
0.5
8
4
V_G2S = 0 V
0
–1
0
1
2
3
4
Gate 1 to Source Voltage V_G1S (V)
Typical Output Characteristics
20
0.8
V_G2S = 3 V
0.6
16
0.4
12
8
0.2
V_G1S = 0
4
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain Current vs. Gate 2 to
Source Voltage
20
1.5 1
V_DS = 6 V
16
0.5
12
8
4
V_G1S = 0 V
0
–1
0
1
2
3
4
Gate 2 to Source Voltage V_G2S (V)
4