3SK194 Datasheet, PDF (3/9 Pages) Hitachi Semiconductor – Silicon N-Channel Dual Gate MOS FET

3SK194
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSX
15
Gate 1 to source breakdown
voltage
V_(BR)G1SS ±10
Gate 2 to source breakdown
voltage
V_(BR)G2SS ±10
Gate 1 cutoff current
I _G1SS
—
Gate 2 cutoff current
I _G2SS
—
Gate 1 to source cutoff voltage V_G1S(off) —
Gate 2 to source cutoff voltage V_G2S(off) —
Drain current
I _DSS
0
Forward transfer admittance |y_fs|
17
Input capacitance
Ciss
—
Output capacitance
Coss —
Reverse transfer capacitance Crss
—
Power gain
PG
12
Noise figure
Noise figure
NF
—
NF
—
Power gain
PG
27
Noise figure
Note: Marking is “IY–”.
NF
—
Typ
—
—
—
—
—
—
—
—
—
2.8
1.8
0.02
15
3.0
3.0
30
1.0
Max Unit
—
V
—
V
—
V
±100 nA
±100 nA
–1.0 V
–1.5 V
10
mA
—
mS
3.5 pF
2.5 pF
—
pF
—
dB
4.5 dB
4.0 dB
—
dB
2.5 dB
Test conditions
I_D = 200 µA,
V_G1S = V_G2S = –5 V
I_G1 = ±10 µA, V_G2S = V_DS = 0
I_G2 = ±10 µA, V_G1S = V_DS = 0
V_G1S = ±8 V, V_G2S = V_DS = 0
V_G2S = ±8 V, V_G1S = V_DS = 0
V_DS = 10 V, V_G2S = 3 V,
I_D = 100 µA
V_DS = 10 V, V_G1S = 3 V,
I_D = 100 µA
V_DS = 6 V, V_G1S = 0, V_G2S = 3 V
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 1 kHz
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 1 MHz
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 900 MHz
V_DD = 12 V, V_AGC = 10.5 V,
f = 60 MHz
V_DS = 6 V, V_G2S = 3 V,
I_D = 10 mA, f = 200 MHz
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