2SK1836 Datasheet, PDF (6/12 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1836, 2SK1837
Body to Drain Diode Reverse
Recovry Time
1000
500
200
100
50
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
20
10
0.5
1
2
5 10 20
50
Reverse Drain Current I _DR (A)
10000
Typical Capacitance
vs. Drain to Source Voltage
Ciss
1000
Ciss
100
V_GS = 0
f = 1 MHz
Crss
10
0
10
20
30
40
50
Drain to Source Voltage V_DS (V)
Dynamic Input Characteristics
500
20
VDD = 100 V
400
250 V
16
400 V
300
VGS
12
VDS
200
8
100
V DD = 400 V
I_D = 50 A
4
250 V
100 V
0
0
80
160
240
320
400
Gate Charge Qg (nc)
5000
2000
Switching Characteristics
VGS = 10 V,V DD =.. 30 V
PW = 2 µs, duty 1 %
1000
500
td (off)
tf
200
tr
100
td (on)
50
0.5
1
2
5 10 20
50
Drain Current ID (A)
6