2SK1836 Datasheet, PDF (5/12 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
50 A
4
Pulse Test
3
2
20 A
1
ID = 10 A
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
0.4
0.3
I D = 50 A
0.2
20 A
0.1
10 A
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
2SK1836, 2SK1837
Static Drain to Source on State
Resistance vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = 10, 15 V
0.02
0.01
5
10 20
50 100 200
500
Drain Current I D (A)
Forward Transfer Admittance
vs. Drain Current
50
Tc = – 25°C
20
25°C
10
75°C
5
2
1 _{VDS = 20 V}
Pulse Test
0.5
0.5 1
2
5 10 20
50
Drain Current ID (A)
5