2SK1836 Datasheet, PDF (3/12 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1836, 2SK1837
Electrical Characteristics (Ta = 25°C)
Item
Drain to source K1836
breakdown
voltage
K1837
Gate to source breakdown
voltage
Gate to source leak current
Zero gate
K1836
voltage drain
current
K1837
Gate to source cutoff voltage
Static drain to K1836
source on state K1837
resistance
Forward transfer admittance
Symbol Min
V_(BR)DSS
450
500
V_(BR)GSS
±30
I _GSS
—
I _DSS
—
V_GS(off)
2.0
R_DS(on)
—
—
|y_fs|
22
Typ Max
—
—
—
—
—
—
—
±10
—
250
—
3.0
0.08 0.10
0.085 0.11
35
—
Input capacitance
Ciss
—
Output capacitance
Coss —
Reverse transfer capacitance Crss
—
Turn-on delay time
t _d(on)
—
Rise time
t_r
—
Turn-off delay time
t _{d(of f)}
—
Fall time
t_f
—
Body to drain diode forward V_DF
—
voltage
Body to drain diode reverse t_rr
—
recovery time
Note 1. Pulse Test
8150 —
2100 —
180 —
80
—
250 —
550 —
220 —
1.1
—
620 —
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±25 V, V_DS = 0
V_DS = 360 V, V_GS = 0
V_DS = 400 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 25 A
V_GS= 10 V*¹
I_D = 25 A
V_DS = 10 V*¹
V_DS = 10 V
V_GS = 0
f = 1 MHz
I_D = 25 A
V_GS = 10 V
R_L = 1.2 Ω
I_F = 50 A, V_GS = 0
I_F = 50 A, V_GS = 0,
di_F / dt = 100 A / µs
3