2SK1836 Datasheet, PDF (4/12 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1836, 2SK1837
Power vs. Temperature
400
300
200
100
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
100
8V
6V
10 V
80
Pulse Test
5.5 V
60
40
5V
20
4.5 V
V GS = 4 V
0
4
8
12
16
20
Drain to Source Voltage V_DS (V)
1000
300
100
30
10
3
1
Maximum Safe Operation Area
Operation in this area
is limited by R DS (on)
1001m0 _s^µ _s
DC
PW
Operation
=(T1c0=m21s5m°(1Cs)shot)
0.3 ^{Ta = 25°C}
K1836
K1837
0.1
1
3
10
30
100 300
Drain to Source Voltage V _DS (V)
1000
Typical Transfer Characteristics
100
VDS = 20 V
Pulse Test
80
60
40
20
Tc = 75°C
25°C
– 25°C
0
2
4
6
8
10
Gate to Source Voltage V GS (V)
4