2SK1836 Datasheet, PDF (2/12 Pages) Hitachi Semiconductor – Silicon N-Channel MOS FET

2SK1836, 2SK1837
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
K1836
K1837
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Symbol
V_DSS
V_GSS
I_D
I *¹
D(pulse)
I _DR
Pch*²
Tch
Tstg
Ratings
Unit
450
V
500
±30
V
50
A
200
A
50
A
250
W
150
°C
–55 to +150
°C
2